| PART |
Description |
Maker |
| FS50SMJ-06 FS50SM-06 |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
|
Powerex Power Semicondu...
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Powerex Power Semiconductors
|
| S6785G |
TOSHIBA HIGH SPEED THYRISTOR SILICON PLANAR TYPE
HIGH SPEED THYRISTOR SILICON PLANAR TYPE HIGH SPEED SWITCHING AND CONTROL APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| IKP20N65H5 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies A...
|
| 2SK182507 2SK1825 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
|
Toshiba Semiconductor
|
| RJK1525DPS-00-T2 RJK1525DPS10 RJK1525DPS |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ504 |
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| DB2U30800L |
For high speed switching circuits DB27308 in USSMini2 type package
|
Panasonic Semiconductor
|
| DA2JF8100L |
Silicon epitaxial planar type For high speed switching circuits
|
Panasonic Battery Group
|
| H7N0307AB-E H7N0307AB05 H7N0307AB |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK60S2DPP-E0 RJK60S2DPP-E0T2 |
600V - 10A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SA1463 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
|
NEC[NEC]
|
| FS50SM-06 |
HIGH-SPEED SWITCHING USE
20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
